Vapor-deposited zeolitic imidazolate frameworks as gap-filling ultra-low-k dielectrics

Mikhail Krishtab, Ivo Stassen, Timothée Stassin, Alexander John Cruz, Oguzhan Orkut Okudur, Silvia Armini, Chris Wilson, Stefan De Gendt and Rob Ameloot ()
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Mikhail Krishtab: Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200F
Ivo Stassen: Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200F
Timothée Stassin: Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200F
Alexander John Cruz: Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200F
Oguzhan Orkut Okudur: imec - Kapeldreef 75
Silvia Armini: imec - Kapeldreef 75
Chris Wilson: imec - Kapeldreef 75
Stefan De Gendt: imec - Kapeldreef 75
Rob Ameloot: Centre for Surface Chemistry and Catalysis, KU Leuven - Celestijnenlaan 200F

Nature Communications, 2019, vol. 10, issue 1, 1-9

Abstract: Abstract The performance of modern chips is strongly related to the multi-layer interconnect structure that interfaces the semiconductor layer with the outside world. The resulting demand to continuously reduce the k-value of the dielectric in these interconnects creates multiple integration challenges and encourages the search for novel materials. Here we report a strategy for the integration of metal-organic frameworks (MOFs) as gap-filling low-k dielectrics in advanced on-chip interconnects. The method relies on the selective conversion of purpose-grown or native metal-oxide films on the metal interconnect lines into MOFs by exposure to organic linker vapor. The proposed strategy is validated for thin films of the zeolitic imidazolate frameworks ZIF-8 and ZIF-67, formed in 2-methylimidazole vapor from ALD ZnO and native CoOx, respectively. Both materials show a Young’s modulus and dielectric constant comparable to state-of-the-art porous organosilica dielectrics. Moreover, the fast nucleation and volume expansion accompanying the oxide-to-MOF conversion enable uniform growth and gap-filling of narrow trenches, as demonstrated for 45 nm half-pitch fork-fork capacitors.

Date: 2019
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DOI: 10.1038/s41467-019-11703-x

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