Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide

Mauro Brotons-Gisbert (), Raphaël Proux, Raphaël Picard, Daniel Andres-Penares, Artur Branny, Alejandro Molina-Sánchez, Juan F. Sánchez-Royo () and Brian D. Gerardot ()
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Mauro Brotons-Gisbert: Heriot-Watt University
Raphaël Proux: Heriot-Watt University
Raphaël Picard: Heriot-Watt University
Daniel Andres-Penares: Universidad de Valencia
Artur Branny: Heriot-Watt University
Alejandro Molina-Sánchez: Universidad de Valencia
Juan F. Sánchez-Royo: Universidad de Valencia
Brian D. Gerardot: Heriot-Watt University

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-temperature. These results, combined with the high tunability of the optical response and outstanding transport properties, position layered InSe as a promising semiconductor for novel optoelectronic devices, in particular for hybrid integrated photonic chips which exploit the out-of-plane dipole orientation.

Date: 2019
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DOI: 10.1038/s41467-019-11920-4

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