Direct evidence for grain boundary passivation in Cu(In,Ga)Se2 solar cells through alkali-fluoride post-deposition treatments

Nicoleta Nicoara, Roby Manaligod, Philip Jackson, Dimitrios Hariskos, Wolfram Witte, Giovanna Sozzi, Roberto Menozzi and Sascha Sadewasser ()
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Nicoleta Nicoara: International Iberian Nanotechnology Laboratory (INL)
Roby Manaligod: International Iberian Nanotechnology Laboratory (INL)
Philip Jackson: Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
Dimitrios Hariskos: Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
Wolfram Witte: Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
Giovanna Sozzi: University of Parma
Roberto Menozzi: University of Parma
Sascha Sadewasser: International Iberian Nanotechnology Laboratory (INL)

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract The properties and performance of polycrystalline materials depend critically on the properties of their grain boundaries. Polycrystalline photovoltaic materials – e.g. hybrid halide perovskites, copper indium gallium diselenide (CIGSe) and cadmium telluride – have already demonstrated high efficiencies and promise cost-effective electricity supply. For CIGSe-based solar cells, an efficiency above 23% has recently been achieved using an alkali-fluoride post-deposition treatment; however, its full impact and functional principle are not yet fully understood. Here, we show direct evidence for the passivation of grain boundaries in CIGSe treated with three different alkali-fluorides through a detailed study of the nanoscale optoelectronic properties. We determine a correlation of the surface potential change at grain boundaries with the open-circuit voltage, which is supported by numerical simulations. Our results suggest that heavier alkali elements might lead to better passivation by reducing the density of charged defects and increasing the formation of secondary phases at grain boundaries.

Date: 2019
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DOI: 10.1038/s41467-019-11996-y

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