Carrier lifetime enhancement in halide perovskite via remote epitaxy

Jie Jiang, Xin Sun, Xinchun Chen, Baiwei Wang, Zhizhong Chen, Yang Hu, Yuwei Guo, Lifu Zhang, Yuan Ma, Lei Gao (), Fengshan Zheng, Lei Jin, Min Chen, Zhiwei Ma, Yuanyuan Zhou, Nitin P. Padture, Kory Beach, Humberto Terrones, Yunfeng Shi, Daniel Gall, Toh-Ming Lu, Esther Wertz, Jing Feng () and Jian Shi ()
Additional contact information
Jie Jiang: Kunming University of Science and Technology
Xin Sun: Rensselaer Polytechnic Institute
Xinchun Chen: Tsinghua University
Baiwei Wang: Rensselaer Polytechnic Institute
Zhizhong Chen: Rensselaer Polytechnic Institute
Yang Hu: Rensselaer Polytechnic Institute
Yuwei Guo: Rensselaer Polytechnic Institute
Lifu Zhang: Rensselaer Polytechnic Institute
Yuan Ma: University of Science and Technology Beijing
Lei Gao: University of Science and Technology Beijing
Fengshan Zheng: Forschungszentrum Jülich
Lei Jin: Forschungszentrum Jülich
Min Chen: Brown University
Zhiwei Ma: Brown University
Yuanyuan Zhou: Brown University
Nitin P. Padture: Brown University
Kory Beach: Rensselaer Polytechnic Institute
Humberto Terrones: Rensselaer Polytechnic Institute
Yunfeng Shi: Rensselaer Polytechnic Institute
Daniel Gall: Rensselaer Polytechnic Institute
Toh-Ming Lu: Rensselaer Polytechnic Institute
Esther Wertz: Rensselaer Polytechnic Institute
Jing Feng: Kunming University of Science and Technology
Jian Shi: Rensselaer Polytechnic Institute

Nature Communications, 2019, vol. 10, issue 1, 1-12

Abstract: Abstract Crystallographic dislocation has been well-known to be one of the major causes responsible for the unfavorable carrier dynamics in conventional semiconductor devices. Halide perovskite has exhibited promising applications in optoelectronic devices. However, how dislocation impacts its carrier dynamics in the ‘defects-tolerant’ halide perovskite is largely unknown. Here, via a remote epitaxy approach using polar substrates coated with graphene, we synthesize epitaxial halide perovskite with controlled dislocation density. First-principle calculations and molecular-dynamics simulations reveal weak film-substrate interaction and low density dislocation mechanism in remote epitaxy, respectively. High-resolution transmission electron microscopy, high-resolution atomic force microscopy and Cs-corrected scanning transmission electron microscopy unveil the lattice/atomic and dislocation structure of the remote epitaxial film. The controlling of dislocation density enables the unveiling of the dislocation-carrier dynamic relation in halide perovskite. The study provides an avenue to develop free-standing halide perovskite film with low dislocation density and improved carried dynamics.

Date: 2019
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DOI: 10.1038/s41467-019-12056-1

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