Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices

Zhaoliang Yang, Xiaomin Wang, Yuzhong Chen, Zhenfa Zheng, Zeng Chen, Wenqi Xu, Weimin Liu, Yang (Michael) Yang, Jin Zhao, Tao Chen () and Haiming Zhu ()
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Zhaoliang Yang: Zhejiang University
Xiaomin Wang: University of Science and Technology of China
Yuzhong Chen: Zhejiang University
Zhenfa Zheng: University of Science and Technology of China
Zeng Chen: Zhejiang University
Wenqi Xu: ShanghaiTech University
Weimin Liu: ShanghaiTech University
Yang (Michael) Yang: Zhejiang University
Jin Zhao: University of Science and Technology of China
Tao Chen: University of Science and Technology of China
Haiming Zhu: Zhejiang University

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract Antimony trisulfide (Sb2S3) is considered to be a promising photovoltaic material; however, the performance is yet to be satisfactory. Poor power conversion efficiency and large open circuit voltage loss have been usually ascribed to interface and bulk extrinsic defects By performing a spectroscopy study on Sb2S3 polycrystalline films and single crystal, we show commonly existed characteristics including redshifted photoluminescence with 0.6 eV Stokes shift, and a few picosecond carrier trapping without saturation at carrier density as high as approximately 1020 cm−3. These features, together with polarized trap emission from Sb2S3 single crystal, strongly suggest that photoexcited carriers in Sb2S3 are intrinsically self-trapped by lattice deformation, instead of by extrinsic defects. The proposed self-trapping explains spectroscopic results and rationalizes the large open circuit voltage loss and near-unity carrier collection efficiency in Sb2S3 thin film solar cells. Self-trapping sets the upper limit on maximum open circuit voltage (approximately 0.8 V) and thus power conversion efficiency (approximately 16 %) for Sb2S3 solar cells.

Date: 2019
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DOI: 10.1038/s41467-019-12445-6

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