Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction

Ki Seok Kim, You Jin Ji, Ki Hyun Kim, Seunghyuk Choi, Dong-Ho Kang, Keun Heo, Seongjae Cho, Soonmin Yim, Sungjoo Lee, Jin-Hong Park, Yeon Sik Jung and Geun Young Yeom ()
Additional contact information
Ki Seok Kim: Sungkyunkwan University
You Jin Ji: Sungkyunkwan University
Ki Hyun Kim: Sungkyunkwan University
Seunghyuk Choi: Sungkyunkwan University
Dong-Ho Kang: Nanyang Technological University
Keun Heo: School of Electronic and Electrical Engineering Sungkyunkwan University
Seongjae Cho: Gachon University
Soonmin Yim: The University of Chicago
Sungjoo Lee: Sungkyunkwan University
Jin-Hong Park: School of Electronic and Electrical Engineering Sungkyunkwan University
Yeon Sik Jung: School of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Geun Young Yeom: Sungkyunkwan University

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.

Date: 2019
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DOI: 10.1038/s41467-019-12592-w

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