A vertical silicon-graphene-germanium transistor

Chi Liu, Wei Ma, Maolin Chen, Wencai Ren and Dongming Sun ()
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Chi Liu: Institute of Metal Research, Chinese Academy of Sciences
Wei Ma: Institute of Metal Research, Chinese Academy of Sciences
Maolin Chen: Institute of Metal Research, Chinese Academy of Sciences
Wencai Ren: Institute of Metal Research, Chinese Academy of Sciences
Dongming Sun: Institute of Metal Research, Chinese Academy of Sciences

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract Graphene-base transistors have been proposed for high-frequency applications because of the negligible base transit time induced by the atomic thickness of graphene. However, generally used tunnel emitters suffer from high emitter potential-barrier-height which limits the transistor performance towards terahertz operation. To overcome this issue, a graphene-base heterojunction transistor has been proposed theoretically where the graphene base is sandwiched by silicon layers. Here we demonstrate a vertical silicon-graphene-germanium transistor where a Schottky emitter constructed by single-crystal silicon and single-layer graphene is achieved. Such Schottky emitter shows a current of 692 A cm−2 and a capacitance of 41 nF cm−2, and thus the alpha cut-off frequency of the transistor is expected to increase from about 1 MHz by using the previous tunnel emitters to above 1 GHz by using the current Schottky emitter. With further engineering, the semiconductor-graphene-semiconductor transistor is expected to be one of the most promising devices for ultra-high frequency operation.

Date: 2019
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DOI: 10.1038/s41467-019-12814-1

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