Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface

Ryo Mori, Patrick B. Marshall, Kaveh Ahadi, Jonathan D. Denlinger, Susanne Stemmer and Alessandra Lanzara ()
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Ryo Mori: Lawrence Berkeley National Laboratory
Patrick B. Marshall: University of California
Kaveh Ahadi: University of California
Jonathan D. Denlinger: Lawrence Berkeley National Laboratory
Susanne Stemmer: University of California
Alessandra Lanzara: Lawrence Berkeley National Laboratory

Nature Communications, 2019, vol. 10, issue 1, 1-7

Abstract: Abstract The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, $${E}_{{\rm{F}}}$$EF, is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases.

Date: 2019
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DOI: 10.1038/s41467-019-13046-z

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