All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Maheswari Sivan, Yida Li (), Hasita Veluri, Yunshan Zhao, Baoshan Tang, Xinghua Wang, Evgeny Zamburg, Jin Feng Leong, Jessie Xuhua Niu, Umesh Chand and Aaron Voon-Yew Thean ()
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Maheswari Sivan: National University of Singapore
Yida Li: National University of Singapore
Hasita Veluri: National University of Singapore
Yunshan Zhao: National University of Singapore
Baoshan Tang: National University of Singapore
Xinghua Wang: National University of Singapore
Evgeny Zamburg: National University of Singapore
Jin Feng Leong: National University of Singapore
Jessie Xuhua Niu: National University of Singapore
Umesh Chand: National University of Singapore
Aaron Voon-Yew Thean: National University of Singapore

Nature Communications, 2019, vol. 10, issue 1, 1-12

Abstract: Abstract 3D monolithic integration of logic and memory has been the most sought after solution to surpass the Von Neumann bottleneck, for which a low-temperature processed material system becomes inevitable. Two-dimensional materials, with their excellent electrical properties and low thermal budget are potential candidates. Here, we demonstrate a low-temperature hybrid co-integration of one-transistor-one-resistor memory cell, comprising a surface functionalized 2D WSe2 p-FET, with a solution-processed WSe2 Resistive Random Access Memory. The employed plasma oxidation technique results in a low Schottky barrier height of 25 meV with a mobility of 230 cm2 V−1 s−1, leading to a 100x performance enhanced WSe2 p-FET, while the defective WSe2 Resistive Random Access Memory exhibits a switching energy of 2.6 pJ per bit. Furthermore, guided by our device-circuit modelling, we propose vertically stacked channel FETs for high-density sub-0.01 μm2 memory cells, offering a new beyond-Si solution to enable 3-D embedded memories for future computing systems.

Date: 2019
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DOI: 10.1038/s41467-019-13176-4

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