Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

Monica Bollani (), Marco Salvalaglio (), Abdennacer Benali, Mohammed Bouabdellaoui, Meher Naffouti, Mario Lodari, Stefano Di Corato, Alexey Fedorov, Axel Voigt, Ibtissem Fraj, Luc Favre, Jean Benoit Claude, David Grosso, Giuseppe Nicotra, Antonio Mio, Antoine Ronda, Isabelle Berbezier and Marco Abbarchi ()
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Monica Bollani: Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS
Marco Salvalaglio: Technische Universität Dresden
Abdennacer Benali: Université de Toulon, CNRS
Mohammed Bouabdellaoui: Université de Toulon, CNRS
Meher Naffouti: Université de Toulon, CNRS
Mario Lodari: Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS
Stefano Di Corato: Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS
Alexey Fedorov: Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS
Axel Voigt: Technische Universität Dresden
Ibtissem Fraj: Université de Toulon, CNRS
Luc Favre: Université de Toulon, CNRS
Jean Benoit Claude: Université de Toulon, CNRS
David Grosso: Université de Toulon, CNRS
Giuseppe Nicotra: CNR-IMM
Antonio Mio: CNR-IMM
Antoine Ronda: Université de Toulon, CNRS
Isabelle Berbezier: Université de Toulon, CNRS
Marco Abbarchi: Université de Toulon, CNRS

Nature Communications, 2019, vol. 10, issue 1, 1-10

Abstract: Abstract Large-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of $$\sim$$~1/60000 and self-assembled $$\sim$$~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits.

Date: 2019
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DOI: 10.1038/s41467-019-13371-3

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