Probing the edge-related properties of atomically thin MoS2 at nanoscale

Teng-Xiang Huang, Xin Cong, Si-Si Wu, Kai-Qiang Lin, Xu Yao, Yu-Han He, Jiang-Bin Wu, Yi-Fan Bao, Sheng-Chao Huang, Xiang Wang (), Ping-Heng Tan () and Bin Ren ()
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Teng-Xiang Huang: Xiamen University
Xin Cong: Chinese Academy of Sciences
Si-Si Wu: Xiamen University
Kai-Qiang Lin: Xiamen University
Xu Yao: Xiamen University
Yu-Han He: Xiamen University
Jiang-Bin Wu: Chinese Academy of Sciences
Yi-Fan Bao: Xiamen University
Sheng-Chao Huang: Xiamen University
Xiang Wang: Xiamen University
Ping-Heng Tan: Chinese Academy of Sciences
Bin Ren: Xiamen University

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS2, which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm−1) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm−1. The power of TERS demonstrated in MoS2 can also be extended to other 2D materials, which may guide the defect engineering for desired properties.

Date: 2019
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DOI: 10.1038/s41467-019-13486-7

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