Stabilization of point-defect spin qubits by quantum wells

Viktor Ivády, Joel Davidsson, Nazar Delegan, Abram L. Falk, Paul V. Klimov, Samuel J. Whiteley, Stephan O. Hruszkewycz, Martin V. Holt, F. Joseph Heremans, Nguyen Tien Son, David D. Awschalom, Igor A. Abrikosov and Adam Gali ()
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Viktor Ivády: Wigner Research Centre for Physics
Joel Davidsson: Linköping University
Nazar Delegan: Argonne National Laboratory
Abram L. Falk: University of Chicago
Paul V. Klimov: University of Chicago
Samuel J. Whiteley: University of Chicago
Stephan O. Hruszkewycz: Argonne National Laboratory
Martin V. Holt: Argonne National Laboratory
F. Joseph Heremans: Argonne National Laboratory
Nguyen Tien Son: Linköping University
David D. Awschalom: Argonne National Laboratory
Igor A. Abrikosov: Linköping University
Adam Gali: Wigner Research Centre for Physics

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract Defect-based quantum systems in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron X-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide as a near-stacking fault axial divacancy and show how this model explains these defects’ robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.

Date: 2019
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DOI: 10.1038/s41467-019-13495-6

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