Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

Matthias Niethammer (), Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Shinobu Onoda, Takeshi Ohshima, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien Son and Jörg Wrachtrup
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Matthias Niethammer: University of Stuttgart
Matthias Widmann: University of Stuttgart
Torsten Rendler: University of Stuttgart
Naoya Morioka: University of Stuttgart
Yu-Chen Chen: University of Stuttgart
Rainer Stöhr: University of Stuttgart
Jawad Ul Hassan: Linköping University
Shinobu Onoda: National Institutes for Quantum and Radiological Science and Technology
Takeshi Ohshima: National Institutes for Quantum and Radiological Science and Technology
Sang-Yun Lee: Korea Institute of Science and Technology
Amlan Mukherjee: University of Stuttgart
Junichi Isoya: University of Tsukuba
Nguyen Tien Son: Linköping University
Jörg Wrachtrup: University of Stuttgart

Nature Communications, 2019, vol. 10, issue 1, 1-8

Abstract: Abstract Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices.

Date: 2019
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DOI: 10.1038/s41467-019-13545-z

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