Ultrasensitive negative capacitance phototransistors

Luqi Tu, Rongrong Cao, Xudong Wang, Yan Chen, Shuaiqin Wu, Fang Wang, Zhen Wang, Hong Shen, Tie Lin, Peng Zhou, Xiangjian Meng, Weida Hu (), Qi Liu (), Jianlu Wang (), Ming Liu and Junhao Chu
Additional contact information
Luqi Tu: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Rongrong Cao: University of Chinese Academy of Sciences
Xudong Wang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Yan Chen: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Shuaiqin Wu: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Fang Wang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Zhen Wang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Hong Shen: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Tie Lin: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Peng Zhou: Fudan University
Xiangjian Meng: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Weida Hu: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Qi Liu: Institute of Microelectronics, Chinese Academy of Sciences
Jianlu Wang: Shanghai Institute of Technical Physics, Chinese Academy of Sciences
Ming Liu: Institute of Microelectronics, Chinese Academy of Sciences
Junhao Chu: Shanghai Institute of Technical Physics, Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused on complex hybrid systems in which leakage paths and dark currents inevitably increase, thereby reducing the photodetectivity. Here, we report an ultrasensitive negative capacitance (NC) MoS2 phototransistor with a layer of ferroelectric hafnium zirconium oxide film in the gate dielectric stack. The prototype photodetectors demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and ultrahigh photodetectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. The enhanced performance benefits from the combined action of the strong photogating effect induced by ferroelectric local electrostatic field and the voltage amplification based on ferroelectric NC effect. These results address the key challenges for MoS2 photodetectors and offer inspiration for the development of other optoelectronic devices.

Date: 2020
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DOI: 10.1038/s41467-019-13769-z

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