Antisymmetric linear magnetoresistance and the planar Hall effect

Yishu Wang, Patrick A. Lee, D. M. Silevitch, F. Gomez, S. E. Cooper, Y. Ren, J.-Q. Yan, D. Mandrus, T. F. Rosenbaum () and Yejun Feng ()
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Yishu Wang: California Institute of Technology
Patrick A. Lee: California Institute of Technology
D. M. Silevitch: California Institute of Technology
F. Gomez: California Institute of Technology
S. E. Cooper: Okinawa Institute of Science and Technology Graduate University
Y. Ren: Argonne National Laboratory
J.-Q. Yan: Oak Ridge National Laboratory
D. Mandrus: Oak Ridge National Laboratory
T. F. Rosenbaum: California Institute of Technology
Yejun Feng: California Institute of Technology

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract The phenomena of antisymmetric magnetoresistance and the planar Hall effect are deeply entwined with ferromagnetism. The intrinsic magnetization of the ordered state permits these unusual and rarely observed manifestations of Onsager’s theorem when time reversal symmetry is broken at zero applied field. Here we study two classes of ferromagnetic materials, rare-earth magnets with high intrinsic coercivity and antiferromagnetic pyrochlores with strongly-pinned ferromagnetic domain walls, which both exhibit antisymmetric magnetoresistive behavior. By mapping out the peculiar angular variation of the antisymmetric galvanomagnetic response with respect to the relative alignments of the magnetization, magnetic field, and electrical current, we experimentally distinguish two distinct underlying microscopic mechanisms: namely, spin-dependent scattering of a Zeeman-shifted Fermi surface and anomalous electron velocities. Our work demonstrates that the anomalous electron velocity physics typically associated with the anomalous Hall effect is prevalent beyond the ρxy(Hz) channel, and should be understood as a part of the general galvanomagnetic behavior.

Date: 2020
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DOI: 10.1038/s41467-019-14057-6

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