Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Guanhua Yang, Yan Shao, Jiebin Niu, Xiaolei Ma, Congyan Lu, Wei Wei, Xichen Chuai, Jiawei Wang, Jingchen Cao, Hao Huang, Guangwei Xu, Xuewen Shi, Zhuoyu Ji, Nianduan Lu, Di Geng, Jing Qi, Yun Cao, Zhongliu Liu, Liwei Liu, Yuan Huang, Lei Liao, Weiqi Dang, Zhengwei Zhang, Yuan Liu, Xidong Duan, Jiezhi Chen, Zhiqiang Fan, Xiangwei Jiang, Yeliang Wang (), Ling Li (), Hong-Jun Gao, Xiangfeng Duan () and Ming Liu ()
Additional contact information
Guanhua Yang: Chinese Academy of Sciences
Yan Shao: Chinese Academy of Sciences
Jiebin Niu: Chinese Academy of Sciences
Xiaolei Ma: Shandong University
Congyan Lu: Chinese Academy of Sciences
Wei Wei: Chinese Academy of Sciences
Xichen Chuai: Chinese Academy of Sciences
Jiawei Wang: Chinese Academy of Sciences
Jingchen Cao: Chinese Academy of Sciences
Hao Huang: Wuhan University
Guangwei Xu: Chinese Academy of Sciences
Xuewen Shi: Chinese Academy of Sciences
Zhuoyu Ji: Chinese Academy of Sciences
Nianduan Lu: Chinese Academy of Sciences
Di Geng: Chinese Academy of Sciences
Jing Qi: Chinese Academy of Sciences
Yun Cao: Chinese Academy of Sciences
Zhongliu Liu: Chinese Academy of Sciences
Liwei Liu: Beijing Institute of Technology
Yuan Huang: Chinese Academy of Sciences
Lei Liao: Wuhan University
Weiqi Dang: Hunan University
Zhengwei Zhang: Hunan University
Yuan Liu: Hunan University
Xidong Duan: Hunan University
Jiezhi Chen: Shandong University
Zhiqiang Fan: Hunan University
Xiangwei Jiang: Hunan University
Yeliang Wang: Chinese Academy of Sciences
Ling Li: Chinese Academy of Sciences
Hong-Jun Gao: Chinese Academy of Sciences
Xiangfeng Duan: University of California
Ming Liu: Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.

Date: 2020
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DOI: 10.1038/s41467-020-14383-0

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