Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Zhiyuan Shi, Xiujun Wang, Qingtian Li, Peng Yang, Guangyuan Lu, Ren Jiang, Huishan Wang, Chao Zhang, Chunxiao Cong, Zhi Liu, Tianru Wu (), Haomin Wang (), Qingkai Yu and Xiaoming Xie
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Zhiyuan Shi: Chinese Academy of Sciences
Xiujun Wang: Chinese Academy of Sciences
Qingtian Li: Chinese Academy of Sciences
Peng Yang: Fudan University
Guangyuan Lu: Chinese Academy of Sciences
Ren Jiang: Chinese Academy of Sciences
Huishan Wang: Chinese Academy of Sciences
Chao Zhang: Chinese Academy of Sciences
Chunxiao Cong: Fudan University
Zhi Liu: Chinese Academy of Sciences
Tianru Wu: Chinese Academy of Sciences
Haomin Wang: Chinese Academy of Sciences
Qingkai Yu: Chinese Academy of Sciences
Xiaoming Xie: Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe82B18 alloy and N2 as reactants. Liquid Fe82B18 not only supplies boron but also continuously dissociates nitrogen atoms from the N2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.

Date: 2020
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DOI: 10.1038/s41467-020-14596-3

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