Epitaxial nucleation and lateral growth of high-crystalline black phosphorus films on silicon

Yijun Xu, Xinyao Shi, Yushuang Zhang, Hongtao Zhang, Qinglin Zhang, Zengli Huang, Xiangfan Xu, Jie Guo, Han Zhang (), Litao Sun, Zhongming Zeng, Anlian Pan () and Kai Zhang ()
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Yijun Xu: CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
Xinyao Shi: CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
Yushuang Zhang: Hunan University
Hongtao Zhang: Southeast University
Qinglin Zhang: Hunan University
Zengli Huang: Vacuum interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
Xiangfan Xu: Tongji University
Jie Guo: Tongji University
Han Zhang: Shenzhen University
Litao Sun: Southeast University
Zhongming Zeng: CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences
Anlian Pan: Hunan University
Kai Zhang: CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Black phosphorus (BP) is a promising two-dimensional layered semiconductor material for next-generation electronics and optoelectronics, with a thickness-dependent tunable direct bandgap and high carrier mobility. Though great research advantages have been achieved on BP, lateral synthesis of high quality BP films still remains a great challenge. Here, we report the direct growth of large-scale crystalline BP films on insulating silicon substrates by a gas-phase growth strategy with an epitaxial nucleation design and a further lateral growth control. The optimized lateral size of the achieved BP films can reach up to millimeters, with the ability to modulate thickness from a few to hundreds of nanometers. The as-grown BP films exhibit excellent electrical properties, with a field-effect and Hall mobility of over 1200 cm2V−1s−1 and 1400 cm2V−1s−1 at room temperature, respectively, comparable to those exfoliated from BP bulk crystals. Our work opens the door for broad applications with BP in scalable electronic and optoelectronic devices.

Date: 2020
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DOI: 10.1038/s41467-020-14902-z

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