Nanoscale triboelectrification gated transistor

Tianzhao Bu, Liang Xu, Zhiwei Yang, Xiang Yang, Guoxu Liu, Yuanzhi Cao, Chi Zhang () and Zhong Lin Wang ()
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Tianzhao Bu: Chinese Academy of Sciences
Liang Xu: Chinese Academy of Sciences
Zhiwei Yang: Chinese Academy of Sciences
Xiang Yang: Chinese Academy of Sciences
Guoxu Liu: Chinese Academy of Sciences
Yuanzhi Cao: Chinese Academy of Sciences
Chi Zhang: Chinese Academy of Sciences
Zhong Lin Wang: Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Tribotronics has attracted great attention owing to the demonstrated triboelectrification-controlled electronics and established direct modulation mechanism by external mechanical stimuli. Here, a nanoscale triboelectrification-gated transistor has been studied with contact-mode atomic force microscopy and scanning Kevin probe microscopy. The detailed working principle was analyzed at first, in which the nanoscale triboelectrification can tune the carrier transport in the transistor. Then with the manipulated nanoscale triboelectrification, the effects of contact force, scan speed, contact cycles, contact region and charge diffusion on the transistor were investigated, respectively. Moreover, the manipulated nanoscale triboelectrification serving as a rewritable floating gate has demonstrated different modulation effects by an applied tip voltage. This work has realized the nanoscale triboelectric modulation on electronics, which could provide a deep understanding for the theoretical mechanism of tribotronics and may have great applications in nanoscale transistor, micro/nano-electronic circuit and nano-electromechanical system.

Date: 2020
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DOI: 10.1038/s41467-020-14909-6

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