Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators

Lin Chang, Weiqiang Xie (), Haowen Shu, Qi-Fan Yang, Boqiang Shen, Andreas Boes, Jon D. Peters, Warren Jin, Chao Xiang, Songtao Liu, Gregory Moille, Su-Peng Yu, Xingjun Wang, Kartik Srinivasan, Scott B. Papp, Kerry Vahala and John E. Bowers ()
Additional contact information
Lin Chang: University of California
Weiqiang Xie: University of California
Haowen Shu: University of California
Qi-Fan Yang: California Institute of Technology
Boqiang Shen: California Institute of Technology
Andreas Boes: University of California
Jon D. Peters: University of California
Warren Jin: University of California
Chao Xiang: University of California
Songtao Liu: University of California
Gregory Moille: National Institute of Standards and Technology
Su-Peng Yu: National Institute of Standards and Technology
Xingjun Wang: Peking University
Kartik Srinivasan: National Institute of Standards and Technology
Scott B. Papp: National Institute of Standards and Technology
Kerry Vahala: California Institute of Technology
John E. Bowers: University of California

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Recent advances in nonlinear optics have revolutionized integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials feature much higher nonlinear coefficients and convenience in active integration, they have suffered from high waveguide losses that prevent the realization of efficient nonlinear processes on-chip. Here, we challenge this status quo and demonstrate a low loss AlGaAs-on-insulator platform with anomalous dispersion and quality (Q) factors beyond 1.5 × 106. Such a high quality factor, combined with high nonlinear coefficient and small mode volume, enabled us to demonstrate a Kerr frequency comb threshold of only ∼36 µW in a resonator with a 1 THz free spectral range, ∼100 times lower compared to that in previous semiconductor platforms. Moreover, combs with broad spans (>250 nm) have been generated with a pump power of ∼300 µW, which is lower than the threshold power of state-of the-art dielectric micro combs. A soliton-step transition has also been observed for the first time in an AlGaAs resonator.

Date: 2020
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DOI: 10.1038/s41467-020-15005-5

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