A FinFET with one atomic layer channel

Mao-Lin Chen, Xingdan Sun, Hang Liu, Hanwen Wang, Qianbing Zhu, Shasha Wang, Haifeng Du, Baojuan Dong (), Jing Zhang, Yun Sun, Song Qiu, Thomas Alava, Song Liu (), Dong-Ming Sun () and Zheng Han ()
Additional contact information
Mao-Lin Chen: Institute of Metal Research, Chinese Academy of Sciences
Xingdan Sun: Institute of Metal Research, Chinese Academy of Sciences
Hang Liu: Hunan University
Hanwen Wang: Institute of Metal Research, Chinese Academy of Sciences
Qianbing Zhu: Institute of Metal Research, Chinese Academy of Sciences
Shasha Wang: High Magnetic Field Laboratory and University of Science and Technology of China, Chinese Academy of Science (CAS)
Haifeng Du: High Magnetic Field Laboratory and University of Science and Technology of China, Chinese Academy of Science (CAS)
Baojuan Dong: Shanxi University
Jing Zhang: Shanxi University
Yun Sun: Institute of Metal Research, Chinese Academy of Sciences
Song Qiu: Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Science
Thomas Alava: Université Grenoble Alpes, CEA, LETI
Song Liu: Hunan University
Dong-Ming Sun: Institute of Metal Research, Chinese Academy of Sciences
Zheng Han: Institute of Metal Research, Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal gate electrodes, also recognized as FinFET. During the past decades, the width of fin (W$${}_{{\rm{fin}}}$$fin) in FinFETs has shrunk from about 150 nm to a few nanometers. However, W$${}_{{\rm{fin}}}$$fin seems to have been levelling off in recent years, owing to the limitation of lithography precision. Here, we show that by adapting a template-growth method, different types of mono-layered two-dimensional crystals are isolated in a vertical manner. Based on this, FinFETs with one atomic layer fin are obtained, with on/off ratios reaching $$\sim\!\! 10^{7}$$~107. Our findings push the FinFET to the sub 1 nm fin-width limit, and may shed light on the next generation nanoelectronics for higher integration and lower power consumption.

Date: 2020
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DOI: 10.1038/s41467-020-15096-0

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