A highly CMOS compatible hafnia-based ferroelectric diode

Qing Luo, Yan Cheng, Jianguo Yang, Rongrong Cao, Haili Ma, Yang Yang, Rong Huang, Wei Wei, Yonghui Zheng, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Peng Yuan, Xiaoyan Li, Lu Tai, Haoran Yu, Dashan Shang, Qi Liu, Bing Yu, Qiwei Ren, Hangbing Lv () and Ming Liu ()
Additional contact information
Qing Luo: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Yan Cheng: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
Jianguo Yang: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Rongrong Cao: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Haili Ma: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Yang Yang: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Rong Huang: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
Wei Wei: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Yonghui Zheng: Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University
Tiancheng Gong: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Jie Yu: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Xiaoxin Xu: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Peng Yuan: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Xiaoyan Li: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Lu Tai: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Haoran Yu: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Dashan Shang: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Qi Liu: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Bing Yu: Xi’an UniIC Semiconductors Co., Ltd.
Qiwei Ren: Xi’an UniIC Semiconductors Co., Ltd.
Hangbing Lv: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences
Ming Liu: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Memory devices with high speed and high density are highly desired to address the ‘memory wall’ issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf0.5Zr0.5O2 films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of Hf0.5Zr0.5O2 film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca21 orthorhombic phase in Hf0.5Zr0.5O2 film. We further implemented this ferroelectric diode in an 8 layers 3D array. Operation speed as high as 20 ns and robust endurance of more than 109 were demonstrated. The built-in nonlinearity of more than 100 guarantees its self-selective property that eliminates the need for external selectors to suppress the leakage current in large array. This work opens up new opportunities for future memory hierarchy evolution.

Date: 2020
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DOI: 10.1038/s41467-020-15159-2

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