Sub-nanosecond memristor based on ferroelectric tunnel junction

Chao Ma, Zhen Luo, Weichuan Huang, Letian Zhao, Qiaoling Chen, Yue Lin, Xiang Liu, Zhiwei Chen, Chuanchuan Liu, Haoyang Sun, Xi Jin, Yuewei Yin () and Xiaoguang Li ()
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Chao Ma: University of Science and Technology of China
Zhen Luo: University of Science and Technology of China
Weichuan Huang: University of Science and Technology of China
Letian Zhao: University of Science and Technology of China
Qiaoling Chen: University of Science and Technology of China
Yue Lin: University of Science and Technology of China
Xiang Liu: University of Science and Technology of China
Zhiwei Chen: University of Science and Technology of China
Chuanchuan Liu: University of Science and Technology of China
Haoyang Sun: University of Science and Technology of China
Xi Jin: University of Science and Technology of China
Yuewei Yin: University of Science and Technology of China
Xiaoguang Li: University of Science and Technology of China

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (FTJ) with the fastest operation speed (600 ps) and the highest number of states (32 states or 5 bits) per cell among the reported FTJs. The sub-nanosecond resistive switching maintains up to 358 K, and the write current density is as low as 4 × 103 A cm−2. The functionality of spike-timing-dependent plasticity served as a solid synaptic device is also obtained with ultrafast operation. Furthermore, it is demonstrated that a Nb:SrTiO3 electrode with a higher carrier concentration and a metal electrode with lower work function tend to improve the operation speed. These results may throw light on the way for overcoming the storage performance gap between different levels of the memory hierarchy and developing ultrafast neuromorphic computing systems.

Date: 2020
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DOI: 10.1038/s41467-020-15249-1

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