Regulating strain in perovskite thin films through charge-transport layers

Ding-Jiang Xue, Yi Hou, Shun-Chang Liu, Mingyang Wei, Bin Chen, Ziru Huang, Zongbao Li, Bin Sun, Andrew H. Proppe, Yitong Dong, Makhsud I. Saidaminov, Shana O. Kelley, Jin-Song Hu and Edward H. Sargent ()
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Ding-Jiang Xue: University of Toronto
Yi Hou: University of Toronto
Shun-Chang Liu: Chinese Academy of Sciences
Mingyang Wei: University of Toronto
Bin Chen: University of Toronto
Ziru Huang: University of Toronto
Zongbao Li: Chinese Academy of Sciences
Bin Sun: University of Toronto
Andrew H. Proppe: University of Toronto
Yitong Dong: University of Toronto
Makhsud I. Saidaminov: University of Toronto
Shana O. Kelley: University of Toronto
Jin-Song Hu: Chinese Academy of Sciences
Edward H. Sargent: University of Toronto

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Thermally-induced tensile strain that remains in perovskite films following annealing results in increased ion migration and is a known factor in the instability of these materials. Previously-reported strain regulation methods for perovskite solar cells (PSCs) have utilized substrates with high thermal expansion coefficients that limits the processing temperature of perovskites and compromises power conversion efficiency. Here we compensate residual tensile strain by introducing an external compressive strain from the hole-transport layer. By using a hole-transport layer with high thermal expansion coefficient, we compensate the tensile strain in PSCs by elevating the processing temperature of hole-transport layer. We find that compressive strain increases the activation energy for ion migration, improving the stability of perovskite films. We achieve an efficiency of 16.4% for compressively-strained PSCs; and these retain 96% of their initial efficiencies after heating at 85 °C for 1000 hours—the most stable wide-bandgap perovskites (above 1.75 eV) reported so far.

Date: 2020
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DOI: 10.1038/s41467-020-15338-1

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