High efficiency and stability of ink-jet printed quantum dot light emitting diodes

Chaoyu Xiang (), Longjia Wu, Zizhe Lu, Menglin Li, Yanwei Wen, Yixing Yang, Wenyong Liu, Ting Zhang, Weiran Cao, Sai-Wing Tsang, Bin Shan, Xiaolin Yan () and Lei Qian ()
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Chaoyu Xiang: TCL Research
Longjia Wu: TCL Research
Zizhe Lu: TCL Research
Menglin Li: City University of Hong Kong
Yanwei Wen: Huazhong University of Science and Technology
Yixing Yang: TCL Research
Wenyong Liu: TCL Research
Ting Zhang: TCL Research
Weiran Cao: TCL Research
Sai-Wing Tsang: City University of Hong Kong
Bin Shan: Huazhong University of Science and Technology
Xiaolin Yan: TCL Research
Lei Qian: TCL Research

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

Date: 2020
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DOI: 10.1038/s41467-020-15481-9

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