Doping-free complementary WSe2 circuit via van der Waals metal integration

Lingan Kong, Xiaodong Zhang, Quanyang Tao, Mingliang Zhang, Weiqi Dang, Zhiwei Li, Liping Feng (), Lei Liao, Xiangfeng Duan () and Yuan Liu ()
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Lingan Kong: Hunan University
Xiaodong Zhang: Northwestern Polytechnical University
Quanyang Tao: Hunan University
Mingliang Zhang: Hunan University
Weiqi Dang: Hunan University
Zhiwei Li: Hunan University
Liping Feng: Northwestern Polytechnical University
Lei Liao: Hunan University
Xiangfeng Duan: University of California
Yuan Liu: Hunan University

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract Two-dimensional (2D) semiconductors have attracted considerable attention for the development of ultra-thin body transistors. However, the polarity control of 2D transistors and the achievement of complementary logic functions remain critical challenges. Here, we report a doping-free strategy to modulate the polarity of WSe2 transistors using same contact metal but different integration methods. By applying low-energy van der Waals integration of Au electrodes, we observed robust and optimized p-type transistor behavior, which is in great contrast to the transistors fabricated on the same WSe2 flake using conventional deposited Au contacts with pronounced n-type characteristics. With the ability to switch majority carrier type and to achieve optimized contact for both electrons and holes, a doping-free logic inverter is demonstrated with higher voltage gain of 340, at the bias voltage of 5.5 V. Furthermore, the simple polarity control strategy is extended for realizing more complex logic functions such as NAND and NOR.

Date: 2020
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DOI: 10.1038/s41467-020-15776-x

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