Record thermopower found in an IrMn-based spintronic stack

Sa Tu, Timothy Ziman, Guoqiang Yu, Caihua Wan, Junfeng Hu, Hao Wu, Hanchen Wang, Mengchao Liu, Chuanpu Liu, Chenyang Guo, Jianyu Zhang, Marco A. Cabero Z., Youguang Zhang, Peng Gao, Song Liu, Dapeng Yu, Xiufeng Han, Ingrid Hallsteinsen, Dustin A. Gilbert, Mamoru Matsuo, Yuichi Ohnuma, Peter Wölfle, Kang L. Wang, Jean-Philippe Ansermet, Sadamichi Maekawa and Haiming Yu ()
Additional contact information
Sa Tu: Beihang University
Timothy Ziman: Institut Laue-Langevin
Guoqiang Yu: University of California
Caihua Wan: University of Chinese Academy of Sciences, Chinese Academy of Sciences
Junfeng Hu: Beihang University
Hao Wu: University of California
Hanchen Wang: Beihang University
Mengchao Liu: Peking University
Chuanpu Liu: Beihang University
Chenyang Guo: University of Chinese Academy of Sciences, Chinese Academy of Sciences
Jianyu Zhang: Beihang University
Marco A. Cabero Z.: Beihang University
Youguang Zhang: Beihang University
Peng Gao: Peking University
Song Liu: Southern University of Science and Technology (SUSTech)
Dapeng Yu: Peking University
Xiufeng Han: University of Chinese Academy of Sciences, Chinese Academy of Sciences
Ingrid Hallsteinsen: Norwegian University of Science and Technology
Dustin A. Gilbert: University of Tennessee
Mamoru Matsuo: University of Chinese Academy of Sciences
Yuichi Ohnuma: University of Chinese Academy of Sciences
Peter Wölfle: Karlsruhe Institute of Technology
Kang L. Wang: University of California
Jean-Philippe Ansermet: Ecole Polytechnique Fédérale de Lausanne (EPFL)
Sadamichi Maekawa: University of Chinese Academy of Sciences
Haiming Yu: Beihang University

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) μV K−1 at room temperature. Our results demonstrate that IrMn-based magnetic devices could harvest the heat dissipation for magnetic sensors, thus contributing to the Power-of-Things paradigm.

Date: 2020
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DOI: 10.1038/s41467-020-15797-6

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