Precise control of the interlayer twist angle in large scale MoS2 homostructures

Mengzhou Liao, Zheng Wei, Luojun Du, Qinqin Wang, Jian Tang, Hua Yu, Fanfan Wu, Jiaojiao Zhao, Xiaozhi Xu, Bo Han, Kaihui Liu, Peng Gao, Tomas Polcar, Zhipei Sun, Dongxia Shi, Rong Yang () and Guangyu Zhang ()
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Mengzhou Liao: Chinese Academy of Sciences
Zheng Wei: Chinese Academy of Sciences
Luojun Du: Aalto University, Tietotie 3
Qinqin Wang: Chinese Academy of Sciences
Jian Tang: Chinese Academy of Sciences
Hua Yu: Chinese Academy of Sciences
Fanfan Wu: Chinese Academy of Sciences
Jiaojiao Zhao: Chinese Academy of Sciences
Xiaozhi Xu: Peking University
Bo Han: Peking University
Kaihui Liu: Peking University
Peng Gao: Peking University
Tomas Polcar: Czech Technical University in Prague, Technicka 2
Zhipei Sun: Aalto University, Tietotie 3
Dongxia Shi: Chinese Academy of Sciences
Rong Yang: Chinese Academy of Sciences
Guangyu Zhang: Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.

Date: 2020
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DOI: 10.1038/s41467-020-16056-4

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