Purely in-plane ferroelectricity in monolayer SnS at room temperature

Naoki Higashitarumizu, Hayami Kawamoto, Chien-Ju Lee, Bo-Han Lin, Fu-Hsien Chu, Itsuki Yonemori, Tomonori Nishimura, Katsunori Wakabayashi, Wen-Hao Chang and Kosuke Nagashio ()
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Naoki Higashitarumizu: The University of Tokyo
Hayami Kawamoto: The University of Tokyo
Chien-Ju Lee: National Chiao Tung University
Bo-Han Lin: National Chiao Tung University
Fu-Hsien Chu: National Chiao Tung University
Itsuki Yonemori: Kwansei Gakuin University
Tomonori Nishimura: The University of Tokyo
Katsunori Wakabayashi: Kwansei Gakuin University
Wen-Hao Chang: National Chiao Tung University
Kosuke Nagashio: The University of Tokyo

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract 2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics.

Date: 2020
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DOI: 10.1038/s41467-020-16291-9

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