Role of ferroelectric polarization during growth of highly strained ferroelectric materials

Rui Liu, Jeffrey G. Ulbrandt, Hsiang-Chun Hsing, Anna Gura, Benjamin Bein, Alec Sun, Charles Pan, Giulia Bertino, Amanda Lai, Kaize Cheng, Eli Doyle, Kenneth Evans-Lutterodt, Randall L. Headrick and Matthew Dawber ()
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Rui Liu: Stony Brook University
Jeffrey G. Ulbrandt: University of Vermont
Hsiang-Chun Hsing: Stony Brook University
Anna Gura: Stony Brook University
Benjamin Bein: Stony Brook University
Alec Sun: Stony Brook University
Charles Pan: Stony Brook University
Giulia Bertino: Stony Brook University
Amanda Lai: Stony Brook University
Kaize Cheng: Stony Brook University
Eli Doyle: Stony Brook University
Kenneth Evans-Lutterodt: Brookhaven National Laboratory
Randall L. Headrick: University of Vermont
Matthew Dawber: Stony Brook University

Nature Communications, 2020, vol. 11, issue 1, 1-10

Abstract: Abstract In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure. Here we show that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. This is studied by focusing on the properties of BaTiO3 thin films grown on very thin layers of PbTiO3 using x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. This motivates the concept of polarization engineering as a complementary approach to strain engineering.

Date: 2020
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DOI: 10.1038/s41467-020-16356-9

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