Mott gap collapse in lightly hole-doped Sr2−xKxIrO4

J. N. Nelson, C. T. Parzyck, B. D. Faeth, J. K. Kawasaki, D. G. Schlom and K. M. Shen ()
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J. N. Nelson: Cornell University
C. T. Parzyck: Cornell University
B. D. Faeth: Cornell University
J. K. Kawasaki: Cornell University
D. G. Schlom: Cornell University
K. M. Shen: Cornell University

Nature Communications, 2020, vol. 11, issue 1, 1-6

Abstract: Abstract The evolution of Sr2IrO4 upon carrier doping has been a subject of intense interest, due to its similarities to the parent cuprates, yet the intrinsic behaviour of Sr2IrO4 upon hole doping remains enigmatic. Here, we synthesize and investigate hole-doped Sr2−xKxIrO4 utilizing a combination of reactive oxide molecular-beam epitaxy, substitutional diffusion and in-situ angle-resolved photoemission spectroscopy. Upon hole doping, we observe the formation of a coherent, two-band Fermi surface, consisting of both hole pockets centred at (π, 0) and electron pockets centred at (π/2, π/2). In particular, the strong similarities between the Fermi surface topology and quasiparticle band structure of hole- and electron-doped Sr2IrO4 are striking given the different internal structure of doped electrons versus holes.

Date: 2020
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DOI: 10.1038/s41467-020-16425-z

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