Nonvolatile ferroelectric field-effect transistors

Xiaojie Chai, Jun Jiang, Qinghua Zhang, Xu Hou, Fanqi Meng, Jie Wang, Lin Gu, David Wei Zhang and An Quan Jiang ()
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Xiaojie Chai: State Key Laboratory of ASIC & Systems, School of Microelectronics, Fudan University
Jun Jiang: State Key Laboratory of ASIC & Systems, School of Microelectronics, Fudan University
Qinghua Zhang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Xu Hou: Zhejiang University
Fanqi Meng: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Jie Wang: Zhejiang University
Lin Gu: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
David Wei Zhang: State Key Laboratory of ASIC & Systems, School of Microelectronics, Fudan University
An Quan Jiang: State Key Laboratory of ASIC & Systems, School of Microelectronics, Fudan University

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single chip to perform in situ processing of captured data. The costly dense wire connections in 3D integrated circuits and in conventional packaging and chip-stacking solutions could affect data communication bandwidths, data storage densities, and optical transmission efficiency. Here we investigated all-ferroelectric nonvolatile LiNbO3 transistors to function through redirection of conducting domain walls between the drain, gate and source electrodes. The transistor operates as a single-pole, double-throw digital switch with complementary on/off source and gate currents controlled using either the gate or source voltages. The conceived device exhibits high wall current density and abrupt off-and-on state switching without subthreshold swing, enabling nonvolatile memory-and-sensor-in-logic and logic-in-memory-and-sensor capabilities with superior energy efficiency, ultrafast operation/communication speeds, and high logic/storage densities.

Date: 2020
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DOI: 10.1038/s41467-020-16623-9

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