Insulators for 2D nanoelectronics: the gap to bridge

Yury Yu. Illarionov (), Theresia Knobloch, Markus Jech, Mario Lanza, Deji Akinwande, Mikhail I. Vexler, Thomas Mueller, Max C. Lemme, Gianluca Fiori, Frank Schwierz and Tibor Grasser ()
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Yury Yu. Illarionov: Institute for Microelectronics (TU Wien)
Theresia Knobloch: Institute for Microelectronics (TU Wien)
Markus Jech: Institute for Microelectronics (TU Wien)
Mario Lanza: Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University
Deji Akinwande: The University of Texas at Austin
Mikhail I. Vexler: Ioffe Physical-Technical Institute
Thomas Mueller: Institute for Photonics (TU Wien)
Max C. Lemme: Advanced Microelectronic Center Aachen (AMICA)
Gianluca Fiori: Università di Pisa
Frank Schwierz: Technical University Ilmenau
Tibor Grasser: Institute for Microelectronics (TU Wien)

Nature Communications, 2020, vol. 11, issue 1, 1-15

Abstract: Abstract Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.

Date: 2020
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DOI: 10.1038/s41467-020-16640-8

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