Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

Feng-Shou Yang, Mengjiao Li (), Mu-Pai Lee, I-Ying Ho, Jiann-Yeu Chen, Haifeng Ling, Yuanzhe Li, Jen-Kuei Chang, Shih-Hsien Yang, Yuan-Ming Chang, Ko-Chun Lee, Yi-Chia Chou, Ching-Hwa Ho, Wenwu Li (), Chen-Hsin Lien () and Yen-Fu Lin ()
Additional contact information
Feng-Shou Yang: National Chung Hsing University
Mengjiao Li: National Chung Hsing University
Mu-Pai Lee: National Chung Hsing University
I-Ying Ho: National Chung Hsing University
Jiann-Yeu Chen: National Chung Hsing University
Haifeng Ling: Nanjing University of Posts&Telecommunications
Yuanzhe Li: Nanjing University of Posts&Telecommunications
Jen-Kuei Chang: National Chung Hsing University
Shih-Hsien Yang: National Chung Hsing University
Yuan-Ming Chang: National Chung Hsing University
Ko-Chun Lee: National Chung Hsing University
Yi-Chia Chou: National Chiao Tung University
Ching-Hwa Ho: National Taiwan University of Science and Technology
Wenwu Li: National Chung Hsing University
Chen-Hsin Lien: National Tsing Hua University
Yen-Fu Lin: National Chung Hsing University

Nature Communications, 2020, vol. 11, issue 1, 1-11

Abstract: Abstract Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is significant to modulate its electronic properties and develop unique applications. Here, we demonstrate a native oxidation-inspired InSe field-effect transistor as an artificial synapse in device level that benefits from the boosted charge trapping under ambient conditions. A thin InOx layer is confirmed under the InSe channel, which can serve as an effective charge trapping layer for information storage. The dynamic characteristic measurement is further performed to reveal the corresponding uniform charge trapping and releasing process, which coincides with its surface-effect-governed carrier fluctuations. As a result, the oxide-decorated InSe device exhibits nonvolatile memory characteristics with flexible programming/erasing operations. Furthermore, an InSe-based artificial synapse is implemented to emulate the essential synaptic functions. The pattern recognition capability of the designed artificial neural network is believed to provide an excellent paradigm for ultra-sensitive van der Waals materials to develop electric-modulated neuromorphic computation architectures.

Date: 2020
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DOI: 10.1038/s41467-020-16766-9

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