Anapole mediated giant photothermal nonlinearity in nanostructured silicon

Tianyue Zhang, Ying Che, Kai Chen, Jian Xu, Yi Xu, Te Wen, Guowei Lu, Xiaowei Liu, Bin Wang, Xiaoxuan Xu, Yi-Shiou Duh, Yu-Lung Tang, Jing Han, Yaoyu Cao, Bai-Ou Guan, Shi-Wei Chu () and Xiangping Li ()
Additional contact information
Tianyue Zhang: Jinan University
Ying Che: Jinan University
Kai Chen: Jinan University
Jian Xu: Jinan University
Yi Xu: Jinan University
Te Wen: Peking University
Guowei Lu: Peking University
Xiaowei Liu: Jinan University
Bin Wang: Nankai University
Xiaoxuan Xu: Nankai University
Yi-Shiou Duh: National Taiwan University
Yu-Lung Tang: National Taiwan University
Jing Han: Jinan University
Yaoyu Cao: Jinan University
Bai-Ou Guan: Jinan University
Shi-Wei Chu: National Taiwan University
Xiangping Li: Jinan University

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract Featured with a plethora of electric and magnetic Mie resonances, high index dielectric nanostructures offer a versatile platform to concentrate light-matter interactions at the nanoscale. By integrating unique features of far-field scattering control and near-field concentration from radiationless anapole states, here, we demonstrate a giant photothermal nonlinearity in single subwavelength-sized silicon nanodisks. The nanoscale energy concentration and consequent near-field enhancements mediated by the anapole mode yield a reversible nonlinear scattering with a large modulation depth and a broad dynamic range, unveiling a record-high nonlinear index change up to 0.5 at mild incident light intensities on the order of MW/cm2. The observed photothermal nonlinearity showcases three orders of magnitude enhancement compared with that of unstructured bulk silicon, as well as nearly one order of magnitude higher than that through the radiative electric dipolar mode. Such nonlinear scattering can empower distinctive point spread functions in confocal reflectance imaging, offering the potential for far-field localization of nanostructured Si with an accuracy approaching 40 nm. Our findings shed new light on active silicon photonics based on optical anapoles.

Date: 2020
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DOI: 10.1038/s41467-020-16845-x

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