Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling

Nima Taghipour, Savas Delikanli, Sushant Shendre, Mustafa Sak, Mingjie Li, Furkan Isik, Ibrahim Tanriover, Burak Guzelturk, Tze Chien Sum and Hilmi Volkan Demir ()
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Nima Taghipour: Bilkent University
Savas Delikanli: Bilkent University
Sushant Shendre: Nanyang Technological University
Mustafa Sak: Bilkent University
Mingjie Li: Nanyang Technological University
Furkan Isik: Bilkent University
Ibrahim Tanriover: Bilkent University
Burak Guzelturk: Advanced Photon Source, Argonne National Laboratory
Tze Chien Sum: Nanyang Technological University
Hilmi Volkan Demir: Bilkent University

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable lasers. However, applications relying on their optical gain suffer from nonradiative Auger decay due to multi-excitonic nature of light amplification in II-VI semiconductor nanocrystals. Here, we show sub-single exciton level of optical gain threshold in specially engineered CdSe/CdS@CdZnS core/crown@gradient-alloyed shell quantum wells. This sub-single exciton ensemble-averaged gain threshold of (Ng)≈ 0.84 (per particle) resulting from impeded Auger recombination, along with a large absorption cross-section of quantum wells, enables us to observe the amplified spontaneous emission starting at an ultralow pump fluence of ~ 800 nJ cm−2, at least three-folds better than previously reported values among all colloidal nanocrystals. Finally, using these gradient shelled quantum wells, we demonstrate a vertical cavity surface-emitting laser operating at a low lasing threshold of 7.5 μJ cm−2. These results represent a significant step towards the realization of solution-processable electrically-driven colloidal lasers.

Date: 2020
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DOI: 10.1038/s41467-020-17032-8

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