Spatial defects nanoengineering for bipolar conductivity in MoS2

Xiaorui Zheng, Annalisa Calò, Tengfei Cao, Xiangyu Liu, Zhujun Huang, Paul Masih Das, Marija Drndic, Edoardo Albisetti, Francesco Lavini, Tai- De Li, Vishal Narang, William P. King, John W. Harrold, Michele Vittadello, Carmela Aruta, Davood Shahrjerdi () and Elisa Riedo ()
Additional contact information
Xiaorui Zheng: New York University
Annalisa Calò: New York University
Tengfei Cao: Ph.D. Program in Physics and Chemistry
Xiangyu Liu: New York University
Zhujun Huang: New York University
Paul Masih Das: University of Pennsylvania
Marija Drndic: University of Pennsylvania
Edoardo Albisetti: New York University
Francesco Lavini: New York University
Tai- De Li: CUNY Graduate Center Advanced Science Research Center
Vishal Narang: CUNY Graduate Center Advanced Science Research Center
William P. King: University of Illinois
John W. Harrold: Medgar Evers College of CUNY, 2010
Michele Vittadello: Ph.D. Program in Physics and Chemistry
Carmela Aruta: University of Roma Tor Vergata
Davood Shahrjerdi: New York University
Elisa Riedo: New York University

Nature Communications, 2020, vol. 11, issue 1, 1-12

Abstract: Abstract Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS2. The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 104. Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H2O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS2 in N2 produces n-character.

Date: 2020
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-17241-1

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DOI: 10.1038/s41467-020-17241-1

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