Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Silvia Conti, Lorenzo Pimpolari, Gabriele Calabrese, Robyn Worsley, Subimal Majee, Dmitry K. Polyushkin, Matthias Paur, Simona Pace, Dong Hoon Keum, Filippo Fabbri, Giuseppe Iannaccone, Massimo Macucci, Camilla Coletti, Thomas Mueller, Cinzia Casiraghi and Gianluca Fiori ()
Additional contact information
Silvia Conti: University of Pisa
Lorenzo Pimpolari: University of Pisa
Gabriele Calabrese: University of Pisa
Robyn Worsley: University of Manchester
Subimal Majee: University of Manchester
Dmitry K. Polyushkin: Vienna University of Technology
Matthias Paur: Vienna University of Technology
Simona Pace: Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia
Dong Hoon Keum: Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia
Filippo Fabbri: Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia
Giuseppe Iannaccone: University of Pisa
Massimo Macucci: University of Pisa
Camilla Coletti: Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia
Thomas Mueller: Vienna University of Technology
Cinzia Casiraghi: University of Manchester
Gianluca Fiori: University of Pisa

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a “channel array” approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing. The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 × 103 (up to 5 × 104) and mobility of 5.5 cm2 V−1 s−1 (up to 26 cm2 V−1 s−1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper.

Date: 2020
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DOI: 10.1038/s41467-020-17297-z

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