Universal growth of ultra-thin III–V semiconductor single crystals

Yunxu Chen, Jinxin Liu, Mengqi Zeng, Fangyun Lu, Tianrui Lv, Yuan Chang, Haihui Lan, Bin Wei, Rong Sun, Junfeng Gao, Zhongchang Wang and Lei Fu ()
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Yunxu Chen: Wuhan University
Jinxin Liu: Wuhan University
Mengqi Zeng: Wuhan University
Fangyun Lu: Wuhan University
Tianrui Lv: Wuhan University
Yuan Chang: Dalian University of Technology, Ministry of Education
Haihui Lan: Wuhan University
Bin Wei: International Iberian Nanotechnology Laboratory (INL)
Rong Sun: International Iberian Nanotechnology Laboratory (INL)
Junfeng Gao: Dalian University of Technology, Ministry of Education
Zhongchang Wang: International Iberian Nanotechnology Laboratory (INL)
Lei Fu: Wuhan University

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract Ultra-thin III–V semiconductors, which exhibit intriguing characteristics, such as two-dimensional (2D) electron gas, enhanced electron–hole interaction strength, and strongly polarized light emission, have always been anticipated in future electronics. However, their inherent strong covalent bonding in three dimensions hinders the layer-by-layer exfoliation, and even worse, impedes the 2D anisotropic growth. The synthesis of desirable ultra-thin III–V semiconductors is hence still in its infancy. Here we report the growth of a majority of ultra-thin III–V single crystals, ranging from ultra-narrow to wide bandgap semiconductors, through enhancing the interfacial interaction between the III–V crystals and the growth substrates to proceed the 2D layer-by-layer growth mode. The resultant ultra-thin single crystals exhibit fascinating properties of phonon frequency variation, bandgap shift, and giant second harmonic generation. Our strategy can provide an inspiration for synthesizing unexpected ultra-thin non-layered systems and also drive exploration of III–V semiconductor-based electronics.

Date: 2020
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DOI: 10.1038/s41467-020-17693-5

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