High-performance p-channel transistors with transparent Zn doped-CuI

Ao Liu, Huihui Zhu, Won-Tae Park, Se-Jun Kim, Hyungjun Kim, Myung-Gil Kim () and Yong-Young Noh ()
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Ao Liu: Pohang University of Science and Technology
Huihui Zhu: Pohang University of Science and Technology
Won-Tae Park: University of Waterloo
Se-Jun Kim: Korea Advanced Institute of Science and Technology
Hyungjun Kim: Korea Advanced Institute of Science and Technology
Myung-Gil Kim: Sungkyunkwan University
Yong-Young Noh: Pohang University of Science and Technology

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract ‘Ideal’ transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm2 V−1 s−1 and high on/off current ratio of ~107 with good operational stability and reproducibility. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n-type metal-oxide semiconductor.

Date: 2020
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DOI: 10.1038/s41467-020-18006-6

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