Transparent near-infrared perovskite light-emitting diodes

Chenchao Xie, Xiaofei Zhao, Evon Woan Yuann Ong and Zhi-Kuang Tan ()
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Chenchao Xie: National University of Singapore
Xiaofei Zhao: National University of Singapore
Evon Woan Yuann Ong: National University of Singapore
Zhi-Kuang Tan: National University of Singapore

Nature Communications, 2020, vol. 11, issue 1, 1-5

Abstract: Abstract Mobile and wearable devices are increasingly reliant on near-infrared (NIR) covert illumination for facial recognition, eye-tracking or motion and depth sensing functions. However, these small devices offer limited spatial real estate that is typically already occupied by their full-area electronic color displays. Here, we report a transparent perovskite light-emitting diode (LED) that could be overlaid across a color display to provide an efficient and high-intensity NIR illumination. Our transparent devices are constructed with an ITO/AZO/PEIE/FAPbI3/poly-TPD/MoO3/Al/ITO/Ag/ITO architecture, and offer a high average transmittance of more than 55% across the visible spectral region. In particular, our Al/ITO/Ag/ITO top transparent electrode was designed to offer a combination low sheet resistance and low plasma damage upon electrode deposition. The devices emit at 799 nm with a high total external quantum efficiency of 5.7% at a current density of 5.3 mA cm−2 and a high radiance of 1.5 W sr−1 m−2, and possess a large functional device area of 120 mm2. The efficient performance is ideal for battery-powered wearable devices, and could enable advanced security and sensing features on future smart-watches, phones, gaming consoles and augmented or virtual reality headsets.

Date: 2020
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DOI: 10.1038/s41467-020-18110-7

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