Si0.97Ge0.03 microelectronic thermoelectric generators with high power and voltage densities

Ruchika Dhawan, Prabuddha Madusanka, Gangyi Hu, Jeff Debord, Toan Tran, Kenneth Maggio, Hal Edwards and Mark Lee ()
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Ruchika Dhawan: The University of Texas at Dallas
Prabuddha Madusanka: The University of Texas at Dallas
Gangyi Hu: The University of Texas at Dallas
Jeff Debord: Texas Instruments Incorporated
Toan Tran: Texas Instruments Incorporated
Kenneth Maggio: Texas Instruments Incorporated
Hal Edwards: Texas Instruments Incorporated
Mark Lee: The University of Texas at Dallas

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Microelectronic thermoelectric generators are one potential solution to energizing energy autonomous electronics, such as internet-of-things sensors, that must carry their own power source. However, thermoelectric generators with the mm2 footprint area necessary for on-chip integration made from high thermoelectric figure-of-merit materials have been unable to produce the voltage and power levels required to run Si electronics using common temperature differences. We present microelectronic thermoelectric generators using Si0.97Ge0.03, made by standard Si processing, with high voltage and power generation densities that are comparable to or better than generators using high figure-of-merit materials. These Si-based thermoelectric generators have

Date: 2020
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18122-3

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DOI: 10.1038/s41467-020-18122-3

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