High-speed III-V nanowire photodetector monolithically integrated on Si
Svenja Mauthe,
Yannick Baumgartner,
Marilyne Sousa,
Qian Ding,
Marta D. Rossell,
Andreas Schenk,
Lukas Czornomaz and
Kirsten E. Moselund ()
Additional contact information
Svenja Mauthe: IBM Research Europe
Yannick Baumgartner: IBM Research Europe
Marilyne Sousa: IBM Research Europe
Qian Ding: ETH Zurich
Marta D. Rossell: IBM Research Europe
Andreas Schenk: ETH Zurich
Lukas Czornomaz: IBM Research Europe
Kirsten E. Moselund: IBM Research Europe
Nature Communications, 2020, vol. 11, issue 1, 1-7
Abstract:
Abstract Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as low as ~0.06 μm2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s−1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.
Date: 2020
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-18374-z
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DOI: 10.1038/s41467-020-18374-z
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