Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

Chang Yi, Chao Liu, Kaichuan Wen, Xiao-Ke Liu, Hao Zhang, Yong Yu, Ning Fan, Fuxiang Ji, Chaoyang Kuang, Bo Ma, Cailing Tu, Ya Zhang, Chen Xue, Renzhi Li, Feng Gao (), Wei Huang () and Jianpu Wang ()
Additional contact information
Chang Yi: Nanjing Tech University (NanjingTech)
Chao Liu: Nanjing Tech University (NanjingTech)
Kaichuan Wen: Nanjing Tech University (NanjingTech)
Xiao-Ke Liu: Linköping University
Hao Zhang: Nanjing Tech University (NanjingTech)
Yong Yu: Linköping University
Ning Fan: Nanjing Tech University (NanjingTech)
Fuxiang Ji: Linköping University
Chaoyang Kuang: Linköping University
Bo Ma: Nanjing Tech University (NanjingTech)
Cailing Tu: Nanjing Tech University (NanjingTech)
Ya Zhang: Nanjing Tech University (NanjingTech)
Chen Xue: Northwestern Polytechnical University (NPU)
Renzhi Li: Nanjing Tech University (NanjingTech)
Feng Gao: Linköping University
Wei Huang: Nanjing Tech University (NanjingTech)
Jianpu Wang: Nanjing Tech University (NanjingTech)

Nature Communications, 2020, vol. 11, issue 1, 1-8

Abstract: Abstract Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.

Date: 2020
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DOI: 10.1038/s41467-020-18380-1

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