Ultrahigh drive current and large selectivity in GeS selector

Shujing Jia, Huanglong Li, Tamihiro Gotoh, Christophe Longeaud, Bin Zhang, Juan Lyu, Shilong Lv, Min Zhu (), Zhitang Song (), Qi Liu (), John Robertson and Ming Liu
Additional contact information
Shujing Jia: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
Huanglong Li: Tsinghua University
Tamihiro Gotoh: Graduate School of Science and Technology, Gunma University
Christophe Longeaud: Group of Electrical Engineering of Paris, CNRS, Centrale Supelec, Paris Saclay and Sorbonne Universities, Plateau de Moulon
Bin Zhang: Analytical and Testing Center of Chongqing University
Juan Lyu: Tsinghua University
Shilong Lv: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
Min Zhu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
Zhitang Song: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences
Qi Liu: Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
John Robertson: University of Cambridge
Ming Liu: Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract Selector devices are indispensable components of large-scale nonvolatile memory and neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic threshold switching device with much higher scalability is currently the most industrially favored selector technology. However, current ovonic threshold switching devices rely heavily on intricate control of material stoichiometry and generally suffer from toxic and complex dopants. Here, we report on a selector with a large drive current density of 34 MA cm−2 and a ~106 high nonlinearity, realized in an environment-friendly and earth-abundant sulfide binary semiconductor, GeS. Both experiments and first-principles calculations reveal Ge pyramid-dominated network and high density of near-valence band trap states in amorphous GeS. The high-drive current capacity is associated with the strong Ge-S covalency and the high nonlinearity could arise from the synergy of the mid-gap traps assisted electronic transition and local Ge-Ge chain growth as well as locally enhanced bond alignment under high electric field.

Date: 2020
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DOI: 10.1038/s41467-020-18382-z

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