Hot electrons in a nanowire hard X-ray detector

Maximilian Zapf (), Maurizio Ritzer, Lisa Liborius, Andreas Johannes, Martin Hafermann, Sven Schönherr, Jaime Segura-Ruiz, Gema Martínez-Criado, Werner Prost and Carsten Ronning ()
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Maximilian Zapf: Friedrich Schiller University of Jena
Maurizio Ritzer: Friedrich Schiller University of Jena
Lisa Liborius: University of Duisburg‐Essen
Andreas Johannes: ESRF—The European Synchrotron
Martin Hafermann: Friedrich Schiller University of Jena
Sven Schönherr: Friedrich Schiller University of Jena
Jaime Segura-Ruiz: ESRF—The European Synchrotron
Gema Martínez-Criado: Consejo Superior de Investigaciones Científicas
Werner Prost: University of Duisburg‐Essen
Carsten Ronning: Friedrich Schiller University of Jena

Nature Communications, 2020, vol. 11, issue 1, 1-7

Abstract: Abstract Nanowire chip-based electrical and optical devices such as biochemical sensors, physical detectors, or light emitters combine outstanding functionality with a small footprint, reducing expensive material and energy consumption. The core functionality of many nanowire-based devices is embedded in their p-n junctions. To fully unleash their potential, such nanowire-based devices require – besides a high performance – stability and reliability. Here, we report on an axial p-n junction GaAs nanowire X-ray detector that enables ultra-high spatial resolution (~200 nm) compared to micron scale conventional ones. In-operando X-ray analytical techniques based on a focused synchrotron X-ray nanobeam allow probing the internal electrical field and observing hot electron effects at the nanoscale. Finally, we study device stability and find a selective hot electron induced oxidization in the n-doped segment of the p-n junction. Our findings demonstrate capabilities and limitations of p-n junction nanowires, providing insight for further improvement and eventual integration into on-chip devices.

Date: 2020
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DOI: 10.1038/s41467-020-18384-x

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