Vertical organic permeable dual-base transistors for logic circuits

Erjuan Guo, Zhongbin Wu (), Ghader Darbandy, Shen Xing, Shu-Jen Wang, Alexander Tahn, Michael Göbel, Alexander Kloes, Karl Leo () and Hans Kleemann
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Erjuan Guo: Technische Universität Dresden
Zhongbin Wu: Technische Universität Dresden
Ghader Darbandy: University of Applied Sciences
Shen Xing: Technische Universität Dresden
Shu-Jen Wang: Technische Universität Dresden
Alexander Tahn: Technische Universität Dresden
Michael Göbel: Leibniz-Institut für Polymerforschung Dresden e.V. (IPF)
Alexander Kloes: University of Applied Sciences
Karl Leo: Technische Universität Dresden
Hans Kleemann: Technische Universität Dresden

Nature Communications, 2020, vol. 11, issue 1, 1-9

Abstract: Abstract The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of

Date: 2020
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DOI: 10.1038/s41467-020-18576-5

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