Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

Hyeong Jin Yun, Jaehoon Lim, Jeongkyun Roh, Darren Chi Jin Neo, Matt Law and Victor I. Klimov ()
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Hyeong Jin Yun: Los Alamos National Laboratory
Jaehoon Lim: Los Alamos National Laboratory
Jeongkyun Roh: Los Alamos National Laboratory
Darren Chi Jin Neo: University of California, Irvine
Matt Law: University of California, Irvine
Victor I. Klimov: Los Alamos National Laboratory

Nature Communications, 2020, vol. 11, issue 1, 1-10

Abstract: Abstract The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

Date: 2020
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DOI: 10.1038/s41467-020-18932-5

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