Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite

Jin-Wook Lee (), Shaun Tan, Tae-Hee Han, Rui Wang, Lizhi Zhang, Changwon Park, Mina Yoon, Chungseok Choi, Mingjie Xu, Michael E. Liao, Sung-Joon Lee, Selbi Nuryyeva, Chenhui Zhu, Kenny Huynh, Mark S. Goorsky, Yu Huang, Xiaoqing Pan and Yang Yang ()
Additional contact information
Jin-Wook Lee: University of California
Shaun Tan: University of California
Tae-Hee Han: University of California
Rui Wang: University of California
Lizhi Zhang: University of Tennessee
Changwon Park: University of Tennessee
Mina Yoon: Oak Ridge National Laboratory
Chungseok Choi: University of California
Mingjie Xu: Irvine Materials Research Institute, University of California
Michael E. Liao: University of California
Sung-Joon Lee: University of California
Selbi Nuryyeva: University of California
Chenhui Zhu: Advanced Light Source, Lawrence Berkeley National Laboratory
Kenny Huynh: University of California
Mark S. Goorsky: University of California
Yu Huang: University of California
Xiaoqing Pan: Irvine Materials Research Institute, University of California
Yang Yang: University of California

Nature Communications, 2020, vol. 11, issue 1, 1-11

Abstract: Abstract Conventional epitaxy of semiconductor films requires a compatible single crystalline substrate and precisely controlled growth conditions, which limit the price competitiveness and versatility of the process. We demonstrate substrate-tolerant nano-heteroepitaxy (NHE) of high-quality formamidinium-lead-tri-iodide (FAPbI3) perovskite films. The layered perovskite templates the solid-state phase conversion of FAPbI3 from its hexagonal non-perovskite phase to the cubic perovskite polymorph, where the growth kinetics are controlled by a synergistic effect between strain and entropy. The slow heteroepitaxial crystal growth enlarged the perovskite crystals by 10-fold with a reduced defect density and strong preferred orientation. This NHE is readily applicable to various substrates used for devices. The proof-of-concept solar cell and light-emitting diode devices based on the NHE-FAPbI3 showed efficiencies and stabilities superior to those of devices fabricated without NHE.

Date: 2020
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DOI: 10.1038/s41467-020-19237-3

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