Twist-angle dependence of moiré excitons in WS2/MoSe2 heterobilayers
Long Zhang,
Zhe Zhang,
Fengcheng Wu (),
Danqing Wang,
Rahul Gogna,
Shaocong Hou,
Kenji Watanabe,
Takashi Taniguchi,
Krishnamurthy Kulkarni,
Thomas Kuo,
Stephen R. Forrest and
Hui Deng ()
Additional contact information
Long Zhang: University of Michigan
Zhe Zhang: University of Michigan
Fengcheng Wu: University of Maryland
Danqing Wang: University of Michigan
Rahul Gogna: University of Michigan
Shaocong Hou: University of Michigan
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Krishnamurthy Kulkarni: University of Michigan
Thomas Kuo: University of Michigan
Stephen R. Forrest: University of Michigan
Hui Deng: University of Michigan
Nature Communications, 2020, vol. 11, issue 1, 1-8
Abstract:
Abstract Moiré lattices formed in twisted van der Waals bilayers provide a unique, tunable platform to realize coupled electron or exciton lattices unavailable before. While twist angle between the bilayer has been shown to be a critical parameter in engineering the moiré potential and enabling novel phenomena in electronic moiré systems, a systematic experimental study as a function of twist angle is still missing. Here we show that not only are moiré excitons robust in bilayers of even large twist angles, but also properties of the moiré excitons are dependant on, and controllable by, the moiré reciprocal lattice period via twist-angle tuning. From the twist-angle dependence, we furthermore obtain the effective mass of the interlayer excitons and the electron inter-layer tunneling strength, which are difficult to measure experimentally otherwise. These findings pave the way for understanding and engineering rich moiré-lattice induced phenomena in angle-twisted semiconductor van der Waals heterostructures.
Date: 2020
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-19466-6
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DOI: 10.1038/s41467-020-19466-6
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